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1N4151WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
* Silicon Epitaxial Planar Diode * Fast switching diode e3 * This diode is also available in other case styles including the DO35 case with the type designation 1N4151, and the MiniMELF case with the type designation LL4151. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part 1N4151WS-V Ordering code 1N4151WS-V-GS18 or 1N4151WS-V-GS08 Marking A5 Remarks Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation
1)Valid
Test condition
Symbol VR VRM
Value 50 75 150
1)
Unit V V mA
Tamb = 25 C and f 50 Hz
IF(AV)
t < 1 s and Tj = 25 C Tamb = 25 C
IFSM Ptot
500 410
1)
mA mW
provided that electrodes are kept at ambient temperature.
Document Number 85847 Rev. 1.3, 17-May-06
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1N4151WS-V
Vishay Semiconductors Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range
1)
Test condition
Symbol RthJA Tj TS
Value 4501) 150 - 65 to + 150
Unit C/W C C
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Leakage current Reverse breakdown voltage Capacitance Reverse recovery time Test condition IF = 50 mA VR = 50 V VR = 20 V, Tj = 150 C IR = 5 A (pulsed) VF = VR = 0 V IF = 10 mA to IR = 10 mA to IR = 1 mA IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Rectification efficiency f = 100 MHz, VRF = 2 V trr trr 0.45 Symbol VF IR IR V(BR)R 75 2 4 2 Min Typ. Max 1.0 50 50 Unit V nA A V pF ns ns
Rectification Efficiency Measurement Circuit
60 VRF = 2 V
2 nF
5 k VO
17436
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Document Number 85847 Rev. 1.3, 17-May-06
1N4151WS-V
Vishay Semiconductors Typical Characteristics
Tamb = 25 C, unless otherwise specified
1000 100 T j = 100 C Ctot - Relative Capacitance (pF)
1.1 1.0 0.9
I F - Forward Current (mA)
T j = 25 C f = 1 MHz
10 25 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.8 0.7 0 2 4 6 8 10
18742
V F - Forward Voltage (V)
18664
VR - Reverse Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Relative Capacitance vs. Reverse Voltage
10000
10000
T j = 25 C f = 1 kHz
rf - Dynamic Forward Resistance ()
1000
I R - Leakage Current (nA)
1000
100
100
10
10 VR = 50 V
1
1 0.01
18662
0.1 1 10 IF - Forward Current (mA)
100
18744
0 20
40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (C)
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 5. Leakage Current vs. Junction Temperature
Ptot - Admissible Power Dissipation (mW)
1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature (C)
18743
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85847 Rev. 1.3, 17-May-06
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1N4151WS-V
Vishay Semiconductors
100 I
= t p /T
tp I FRM
T = 1/f p
I FRM - Admissible Repetitive
Peak Forward Current (A)
10
= 0
0.1 0.2
t T
1
0.5
18709
10 -5
10 -4
10 -3
10 -2 tp - Pulse Length (s)
10 -1
1
10
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Package Dimensions in mm (Inches): SOD323
1.15 (0.045) 0.8 (0.031) 0.1 (0.004) max
foot print recommendation:
0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) cathode bar
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
0.6 (0.024)
0.40 (0.016)
0.20 (0.008)
2.85 (0.112) 2.50 (0.098)
Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443
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1.5 (0.059)
1.1 (0.043)
1.6 (0.063)
0.6 (0.024)
Document Number 85847 Rev. 1.3, 17-May-06
1N4151WS-V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85847 Rev. 1.3, 17-May-06
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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